Chemical and special gas

 

 

Product Specifications

Mainly used for rapid and low-temperature deposition of uniform thin films in miniaturized semiconductor processes, such as integrated circuits with nodes below 14 nanometers (nm), advanced random access memory and flash memory (DRAM/NAND Flash) ).
There are also applications in high-end solar cells, TFT-LCD panels and LEDs by adding silane gas mixture.

 

Applications

  • The basic properties of Si2H6 and SiH4 are similar, but the reactivity of Si2H6 is more advantageous than that of SiH4.
  • In the LPCVD process, the deposition rate of Si2H6 is about 10 times higher than that of SiH4, which can shorten the process time and improve the production efficiency.
  • The film formation temperature of Si2H6 in pure a-Si thin film deposition and low temperature polysilicon (LTPS) process can be reduced by about 100°C compared to SiH4, which greatly increases the thermal budget (Therma Budget) and is a key material for the development of next-generation technology products.

 

Safety regulations

Complete information system & management system

  • Obtained ISO 9001 international quality assurance certification.
  • Build ERP system.
  • Establish an internal control system.
  • Target management and performance reward system was established.

Better than safety and environmental regulations

  • Obtained OHSAS 18001 occupational safety and health safety certification